![]() This drift has to be added to the worst-case offset voltage when calculating offset effects and can be significant when operating over a wide temperature range.Įarly MOS-input op-amps suffered from poor offset voltage performance due to gate threshold voltage shifts with time, temperature, and applied gate voltage. A rule of thumb is 3.3 μV/☌ for each millivolt of initial offset. For bipolar inputs, the magnitude of drift is directly related to the initial offset at room temperature. Present technology for standard devices allows temperature coefficients of between 5 and 40 μV/☌, with 10 μV/☌ being typical. Most manufacturers will specify drift with temperature, but only those offering precision devices will specify drift over time. Offset voltage drift is closely related to initial offset voltage and is a measure of how V OS changes with temperature and time. Peter Wilson, in The Circuit Designer's Companion (Fourth Edition), 2017 Offset Drift ![]()
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